Photoluminescence of metalorganic-chemical-vapor-deposition-grown GaInNAs/GaAs single quantum wells
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Abstract
Photoluminescence (PL) spectra of interband transitions in GaInNAs/GaAs single quantum wells grown by metalorganic chemical vapor deposition on semi-insulating GaAs substrates were measured at 77 K for several samples grown with different In compositions and dimethylhydrazine (DMH)/III ratios. The results show that the PL intensity increases as the In mole fraction is increased from 0% to 25%, but the PL intensity is degraded for samples with an In mole fraction of 30% or higher. The peak position energies of the PL spectra were investigated as a function of the DMH/III ratio. Thermal annealing effect induced a blueshift in the PL spectra peak position energy in samples grown with high DMH/III ratios. © 2003 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Photoluminescence of metalorganic-chemical-vapor-deposition-grown GaInNAs/GaAs single quantum wells</title>
<author><name sortKey="Manasreh, M O" uniqKey="Manasreh M">M. O. Manasreh</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87131</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Nouveau-Mexique</region>
</placeName>
<wicri:cityArea>Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque</wicri:cityArea>
</affiliation>
<affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701</s1>
<sZ>1 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Arkansas</region>
</placeName>
<wicri:cityArea>Department of Electrical Engineering, University of Arkansas, Fayetteville</wicri:cityArea>
</affiliation>
<affiliation wicri:level="2"><inist:fA14 i1="03"><s1>National Renewable Energy Laboratory, 1617 Cole Boulevards, Golden, Colorado 80401</s1>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Colorado</region>
</placeName>
<wicri:cityArea>National Renewable Energy Laboratory, 1617 Cole Boulevards, Golden</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Friedman, D J" uniqKey="Friedman D">D. J. Friedman</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87131</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Nouveau-Mexique</region>
</placeName>
<wicri:cityArea>Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Ma, W Q" uniqKey="Ma W">W. Q. Ma</name>
</author>
<author><name sortKey="Workman, C L" uniqKey="Workman C">C. L. Workman</name>
</author>
<author><name sortKey="George, C E" uniqKey="George C">C. E. George</name>
</author>
<author><name sortKey="Salamo, G J" uniqKey="Salamo G">G. J. Salamo</name>
</author>
</titleStmt>
<publicationStmt><idno type="inist">03-0067629</idno>
<date when="2003-01-27">2003-01-27</date>
<idno type="stanalyst">PASCAL 03-0067629 AIP</idno>
<idno type="RBID">Pascal:03-0067629</idno>
<idno type="wicri:Area/Main/Corpus">00DE46</idno>
<idno type="wicri:Area/Main/Repository">00C689</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0003-6951</idno>
<title level="j" type="abbreviated">Appl. phys. lett.</title>
<title level="j" type="main">Applied physics letters</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term>
<term>Experimental study</term>
<term>Gallium arsenides</term>
<term>III-V semiconductors</term>
<term>Indium compounds</term>
<term>Line intensity</term>
<term>MOCVD coatings</term>
<term>Photoluminescence</term>
<term>Semiconductor quantum wells</term>
<term>Spectral line shift</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>7855C</term>
<term>7867D</term>
<term>8107S</term>
<term>8105E</term>
<term>6172C</term>
<term>Etude expérimentale</term>
<term>Gallium arséniure</term>
<term>Indium composé</term>
<term>Semiconducteur III-V</term>
<term>Puits quantique semiconducteur</term>
<term>Revêtement MOCVD</term>
<term>Recuit</term>
<term>Photoluminescence</term>
<term>Intensité raie</term>
<term>Déplacement raie</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Photoluminescence (PL) spectra of interband transitions in GaInNAs/GaAs single quantum wells grown by metalorganic chemical vapor deposition on semi-insulating GaAs substrates were measured at 77 K for several samples grown with different In compositions and dimethylhydrazine (DMH)/III ratios. The results show that the PL intensity increases as the In mole fraction is increased from 0% to 25%, but the PL intensity is degraded for samples with an In mole fraction of 30% or higher. The peak position energies of the PL spectra were investigated as a function of the DMH/III ratio. Thermal annealing effect induced a blueshift in the PL spectra peak position energy in samples grown with high DMH/III ratios. © 2003 American Institute of Physics.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0>
</fA01>
<fA02 i1="01"><s0>APPLAB</s0>
</fA02>
<fA03 i2="1"><s0>Appl. phys. lett.</s0>
</fA03>
<fA05><s2>82</s2>
</fA05>
<fA06><s2>4</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Photoluminescence of metalorganic-chemical-vapor-deposition-grown GaInNAs/GaAs single quantum wells</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>MANASREH (M. O.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>FRIEDMAN (D. J.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>MA (W. Q.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>WORKMAN (C. L.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>GEORGE (C. E.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>SALAMO (G. J.)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87131</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701</s1>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>National Renewable Energy Laboratory, 1617 Cole Boulevards, Golden, Colorado 80401</s1>
</fA14>
<fA14 i1="04"><s1>Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701</s1>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA20><s1>514-516</s1>
</fA20>
<fA21><s1>2003-01-27</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>10020</s2>
</fA43>
<fA44><s0>8100</s0>
<s1>© 2003 American Institute of Physics. All rights reserved.</s1>
</fA44>
<fA47 i1="01" i2="1"><s0>03-0067629</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Applied physics letters</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Photoluminescence (PL) spectra of interband transitions in GaInNAs/GaAs single quantum wells grown by metalorganic chemical vapor deposition on semi-insulating GaAs substrates were measured at 77 K for several samples grown with different In compositions and dimethylhydrazine (DMH)/III ratios. The results show that the PL intensity increases as the In mole fraction is increased from 0% to 25%, but the PL intensity is degraded for samples with an In mole fraction of 30% or higher. The peak position energies of the PL spectra were investigated as a function of the DMH/III ratio. Thermal annealing effect induced a blueshift in the PL spectra peak position energy in samples grown with high DMH/III ratios. © 2003 American Institute of Physics.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70H55C</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70H67D</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80A05Y</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B80A05H</s0>
</fC02>
<fC02 i1="05" i2="3"><s0>001B60A72C</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>7855C</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>7867D</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>8107S</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>8105E</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>6172C</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Etude expérimentale</s0>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Experimental study</s0>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Indium composé</s0>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Indium compounds</s0>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>III-V semiconductors</s0>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Revêtement MOCVD</s0>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>MOCVD coatings</s0>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Recuit</s0>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Annealing</s0>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Photoluminescence</s0>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Photoluminescence</s0>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Intensité raie</s0>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Line intensity</s0>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Déplacement raie</s0>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Spectral line shift</s0>
</fC03>
<fN21><s1>034</s1>
</fN21>
<fN47 i1="01" i2="1"><s0>0304M000070</s0>
</fN47>
</pA>
</standard>
</inist>
</record>
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