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Photoluminescence of metalorganic-chemical-vapor-deposition-grown GaInNAs/GaAs single quantum wells

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Photoluminescence of metalorganic-chemical-vapor-deposition-grown GaInNAs/GaAs single quantum wells

Auteurs : RBID : Pascal:03-0067629

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Abstract

Photoluminescence (PL) spectra of interband transitions in GaInNAs/GaAs single quantum wells grown by metalorganic chemical vapor deposition on semi-insulating GaAs substrates were measured at 77 K for several samples grown with different In compositions and dimethylhydrazine (DMH)/III ratios. The results show that the PL intensity increases as the In mole fraction is increased from 0% to 25%, but the PL intensity is degraded for samples with an In mole fraction of 30% or higher. The peak position energies of the PL spectra were investigated as a function of the DMH/III ratio. Thermal annealing effect induced a blueshift in the PL spectra peak position energy in samples grown with high DMH/III ratios. © 2003 American Institute of Physics.

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